A telecom O-band emitter in diamond

Abstract

Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range, which are incompatible with long-distance fiber communication and unfavorable for imaging in biological tissues. Here, we report the experimental observation of a new color center that emits in the telecom O-band, which we observe in silicon-doped bulk single crystal diamonds and microdiamonds. Combining absorption and photoluminescence measurements, we identify a zero-phonon line at 1221 nm and phonon replicas separated by 42 meV. Using transient absorption spectroscopy, we measure an excited state lifetime of around 270 ps and observe a long-lived baseline that may arise from intersystem crossing to another spin manifold.

References in corpus (9)

• Photonic quantum technologies
• Quantum networks based on color centers in diamond
• All-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond
• High-Q optical nanocavities in bulk single-crystal diamond
• Low temperature investigations of single silicon vacancy colour centres in diamond
• Prospects and challenges of quantum emitters in 2D materials
• Detection of single W-centers in silicon
• Materials challenges for quantum technologies based on color centers in diamond
• Identification of a telecom wavelength single photon emitter in silicon

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• The $N_{2}V$ color center: a ubiquitous visible and near-infrared-II quantum emitter in nitrogen-doped diamond
• Investigation of oxygen-vacancy complexes in diamond by means of \textit{ab initio} calculations
• Modeling the Zero-Phonon Line of Strained SnV Centers in Diamond; Including Reflections on Computational Cost and Accuracy