A telecom O-band emitter in diamond

Abstract

Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range, which are incompatible with long-distance fiber communication and unfavorable for imaging in biological tissues. Here, we report the experimental observation of a new color center that emits in the telecom O-band, which we observe in silicon-doped bulk single crystal diamonds and microdiamonds. Combining absorption and photoluminescence measurements, we identify a zero-phonon line at 1221 nm and phonon replicas separated by 42 meV. Using transient absorption spectroscopy, we measure an excited state lifetime of around 270 ps and observe a long-lived baseline that may arise from intersystem crossing to another spin manifold.

References in corpus (24)

• Photonic quantum technologies
• Heralded entanglement between solid-state qubits separated by 3 meters
• A robust, scanning quantum system for nanoscale sensing and imaging
• Natural and artificial atoms for quantum computation
• Isolating and enhancing the emission of single erbium ions using a silicon nanophotonic cavity
• Quantum networks based on color centers in diamond
• All-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond
• High-Q optical nanocavities in bulk single-crystal diamond
• Observation of an environmentally insensitive solid state spin defect in diamond
• Quantum network nodes based on diamond qubits with an efficient nanophotonic interface
• Optical quantum nondemolition measurement of a solid-state spin without a cycling transition
• An integrated nanophotonic quantum register based on silicon-vacancy spins in diamond
• Coherent control of the silicon-vacancy spin in diamond
• Low temperature investigations of single silicon vacancy colour centres in diamond
• Optical addressing of an individual erbium ion in silicon
• Bright room temperature single photon source at telecom range in cubic silicon carbide
• Prospects and challenges of quantum emitters in 2D materials
• Materials challenges for quantum technologies based on color centers in diamond
• Detection of single W-centers in silicon
• Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide
• Identification and tunable optical coherent control of transition-metal spins in silicon carbide
• Identification of a telecom wavelength single photon emitter in silicon
• Optically detected magnetic resonance in neutral silicon vacancy centers in diamond via bound exciton states
• Strongly Anisotropic Spin Relaxation in the Neutral Silicon Vacancy Center in Diamond

Cited by in corpus (7)

• Alternant Hydrocarbon Diradicals as Optically Addressable Molecular Qubits
• Rational Design of Efficient Defect-Based Quantum Emitters
• Multicone Diamond Waveguides for Nanoscale Quantum Sensing
• Na in Diamond: High Spin Defects Revealed by the ADAQ High-Throughput Computational Database
• The $N_{2}V$ color center: a ubiquitous visible and near-infrared-II quantum emitter in nitrogen-doped diamond
• Investigation of oxygen-vacancy complexes in diamond by means of \textit{ab initio} calculations
• Modeling the Zero-Phonon Line of Strained SnV Centers in Diamond; Including Reflections on Computational Cost and Accuracy