Rational Design of Efficient Defect-Based Quantum Emitters

Abstract

Single-photon emitters are an essential component of quantum networks, and defects or impurities in semiconductors are a promising platform to realize such quantum emitters. Here we present a model that encapsulates the essential physics of coupling to phonons, which governs the behavior of real single-photon emitters, and critically evaluate several approximations that are commonly utilized. Emission in the telecom wavelength range is highly desirable, but our model shows that nonradiative processes are greatly enhanced at these low photon energies, leading to a decrease in efficiency. Our results suggest that reducing the phonon frequency is a fruitful avenue to enhance the efficiency.

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• Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride
• Na in Diamond: High Spin Defects Revealed by the ADAQ High-Throughput Computational Database
• Topological Defects in Semiconducting Carbon Nanotubes as Triplet Exciton Traps and Single-Photon Emitters
• Characterization of Chromium Impurities in $\beta$-Ga${}_2$O${}_3$
• Approximate Excited-State Potential Energy Surfaces for Defects in Solids
• A CN complex as an alternative to the T center in Si
• Machine Learning Phonon Spectra for Fast and Accurate Optical Lineshapes of Defects
• Off-resonant photoluminescence spectroscopy of high-optical quality single photon emitters in GaN