Coherence properties of shallow donor qubits in ZnO

Abstract

Defects in crystals are leading candidates for photon-based quantum technologies, but progress in developing practical devices critically depends on improving defect optical and spin properties. Motivated by this need, we study a new defect qubit candidate, the shallow donor in ZnO. We demonstrate all-optical control of the electron spin state of the donor qubits and measure the spin coherence properties. We find a longitudinal relaxation time T${}_1$ exceeding 100 ms, an inhomogeneous dephasing time T${}_2^{\ast }$ of $17\pm 2$ ns, and a Hahn spin-echo time T${}_2$ of $50\pm 13$ $\mu$s. The magnitude of T${}_2^{\ast }$ is consistent with the inhomogeneity of the nuclear hyperfine field in natural ZnO. Possible mechanisms limiting T${}_2$ include instantaneous diffusion and nuclear spin diffusion (spectral diffusion). These results are comparable to the phosphorous donor system in natural silicon, suggesting that with isotope and chemical purification long qubit coherence times can be obtained for donor spins in a direct band gap semiconductor. This work motivates further research on high-purity material growth, quantum device fabrication, and high-fidelity control of the donor:ZnO system for quantum technologies.

References in corpus (33)

• Quantum Computing
• The nitrogen-vacancy colour centre in diamond
• Electron spin relaxation by nuclei in semiconductor quantum dots
• High-fidelity projective readout of a solid-state spin quantum register
• Electron spin coherence exceeding seconds in high purity silicon
• Creation of entangled states of distant atoms by interference
• Deterministic delivery of remote entanglement on a quantum network
• Spin-flip transitions between Zeeman sublevels in semiconductor quantum dots
• Quantum memories: emerging applications and recent advances
• Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon
• Generation of heralded entanglement between distant hole spins
• Quantum theory for electron spin decoherence induced by nuclear spin dynamics in semiconductor quantum computer architectures: Spectral diffusion of localized electron spins in the nuclear solid-state environment
• Theory of nuclear induced spectral diffusion: Spin decoherence of phosphorus donors in Si and GaAs quantum dots
• Topological quantum computing with a very noisy network and local error rates approaching one percent
• Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
• Silicon quantum processor with robust long-distance qubit couplings
• Quantum properties of dichroic silicon vacancies in silicon carbide
• Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking
• Ultraviolet photonic crystal laser
• Recent advances on integrated quantum communications
• Coherence of Spin Qubits in Silicon
• Brokered Graph State Quantum Computing
• Prospects for measurement-based quantum computing with solid state spins
• Quantum computers based on electron spins controlled by ultra-fast, off-resonant, single optical pulses
• Coherent Population Trapping of Electron Spins in a Semiconductor
• Optical properties of an ensemble of G-centers in silicon
• Ultrafast optical spin echo for electron spins in semiconductors
• Ultrafast control of donor-bound electron spins with single detuned optical pulses
• Longitudinal spin-relaxation of donor-bound electrons in direct bandgap semiconductors
• Millisecond spin-flip times of donor-bound electrons in GaAs
• Spin noise spectroscopy of donor bound electrons in ZnO
• Unambiguous determination of spin dephasing times in ZnO
• Transient photon echoes from donor-bound excitons in ZnO epitaxial layers

Cited by in corpus (13)

• Rational Design of Efficient Defect-Based Quantum Emitters
• Spin rotation by resonant electric field in few-level quantum dots: Floquet dynamics and tunneling
• Ensemble spin relaxation of shallow donor qubits in ZnO
• Electric dipole spin resonance at shallow donors in quantum wires
• Single quantum emitters with spin ground states based on Cl bound excitons in ZnSe
• Optical spin control and coherence properties of acceptor bound holes in strained GaAs
• Properties of donor qubits in ZnO formed by indium ion implantation
• Quantum beats in the polarization of the spin-dependent photon echo from donor-bound excitons in CdTe/(Cd,Mg)Te quantum wells
• Photon-mediated entanglement scheme between a ZnO semiconductor defect and a trapped Yb ion
• Contributions to the optical linewidth of shallow donor-bound excitonic transition in ZnO
• Formation of multiple quantum dots in ZnO heterostructures
• Excited states of a phosphorus pair in silicon: Effects of valley-orbital interaction and electron-electron interactions
• Efficient Analysis of Photoluminescence Images for the Classification of Single-Photon Emitters