activity
20162020
most citedLayer-Resolved Magnetic Proximity Effect in van der Waals Heterostructures

277 citations · 287 across the 2 of their papers we have counts for

collaborators

6 papers

quant-ph202010 cited

Optical spin control and coherence properties of acceptor bound holes in strained GaAs

Xiayu Linpeng, Todd Karin, Mikhail V. Durnev +5

Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei…

cond-mat.mes-hall2020277 cited

Layer-Resolved Magnetic Proximity Effect in van der Waals Heterostructures

Ding Zhong, Kyle L. Seyler, Xiayu Linpeng +8

Magnetic proximity effects are crucial ingredients for engineering spintronic, superconducting, and topological phenomena in heterostructures. Such effects are highly sensitive to…

cond-mat.mes-hall2019

Microscopic model of stacking-fault potential and exciton wave function in GaAs

Mikhail V. Durnev, Mikhail M. Glazov, Xiayu Linpeng +7

Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structura…

cond-mat.mes-hall2018

Valley Manipulation by Optically Tuning the Magnetic Proximity Effect in WSe/CrI Heterostructures

Kyle L. Seyler, Ding Zhong, Bevin Huang +9

Monolayer valley semiconductors, such as tungsten diselenide (WSe), possess valley pseudospin degrees of freedom that are optically addressable but degenerate in energy. Liftin…

quant-ph2018

Coherence properties of shallow donor qubits in ZnO

Xiayu Linpeng, Maria L. K. Viitaniemi, Aswin Vishnuradhan +4

Defects in crystals are leading candidates for photon-based quantum technologies, but progress in developing practical devices critically depends on improving defect optical and sp…

cond-mat.mtrl-sci2016

Optical Visualization of Radiative Recombination at Partial Dislocations in GaAs

Todd Karin, Xiayu Linpeng, Ashish K. Rai +3

Individual dislocations in an ultra-pure GaAs epilayer are investigated with spatially and spectrally resolved photoluminescence imaging at 5~K. We find that some dislocations act…