Microscopic model of stacking-fault potential and exciton wave function in GaAs

Abstract

Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.

arXiv comment12 pages, 10 figures

References in corpus (9)

• Macroscopically ordered state in exciton system
• Structural and optical properties of high quality zinc-blende/wurtzite GaAs hetero-nanowires
• Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
• Electronic bands of III-V semiconductor polytypes and their alignment
• Direct experimental determination of the spontaneous polarization of GaN
• Collection of indirect excitons in a diamond-shaped electrostatic trap
• Formation of k-space indirect magnetoexcitons in double-quantum-well direct gap heterostructures
• Giant permanent dipole moment of 2D excitons bound to a single stacking fault
• Modelling the electronic properties of GaAs polytype nanostructures: impact of strain on the conduction band character