activity
20162022
most citedDynamic Interface Rearrangement in LaFeO / -SrTiO Heterojunctions

32 citations · 56 across the 4 of their papers we have counts for

collaborators

14 papers

cond-mat.mtrl-sci20221 cited

Deep-learning-based prediction of nanoparticle phase transitions during in situ transmission electron microscopy

Wenkai Fu, Steven R. Spurgeon, Chongmin Wang +3

We develop the machine learning capability to predict a time sequence of in-situ transmission electron microscopy (TEM) video frames based on the combined long-short-term-memory (L…

cond-mat.mtrl-sci2022

Hybrid Molecular Beam Epitaxy of Ge-based Oxides

Fengdeng Liu, Tristan K Truttmann, Dooyong Lee +6

Germanium-based oxides such as rutile GeO2 are garnering attention owing to their wide band gaps and the prospects for ambipolar doping for application in high-power devices. Here,…

cond-mat.mtrl-sci202123 cited

Tuning band alignment at a semiconductor-crystalline oxide heterojunction via electrostatic modulation of the interfacial dipole

M. Chrysler, J. Gabel, T. -L. Lee +14

We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be…

cond-mat.mtrl-sci2021

Percolation of Ion-Irradiation-Induced Disorder in Complex Oxide Interfaces

Bethany Matthews, Michel Sassi, Christopher M. Barr +5

Mastery of order-disorder processes in highly non-equilibrium nanostructured oxides has significant implications for the development of emerging energy technologies. However, we ar…

cond-mat.mtrl-sci2020

Order-Disorder Behavior at Thin Film Oxide Interfaces

Steven R. Spurgeon

Order-disorder processes fundamentally determine the structure and properties of many important oxide systems for energy and computing applications. While these processes have been…

cond-mat.mes-hall2019

Microscopic model of stacking-fault potential and exciton wave function in GaAs

Mikhail V. Durnev, Mikhail M. Glazov, Xiayu Linpeng +7

Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structura…