Electron-phonon processes of the silicon-vacancy centre in diamond

Abstract

We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy (${\mathrm{SiV}}^{-}$) centre in diamond. Optical transition line widths, transition wavelength and excited state lifetimes are measured for the temperature range 4-350 K. The ground state orbital relaxation rates are measured using time-resolved fluorescence techniques. A microscopic model of the thermal broadening in the excited and ground states of the ${\mathrm{SiV}}^{-}$ centre is developed. A vibronic process involving single-phonon transitions is found to determine orbital relaxation rates for both the ground and the excited states at cryogenic temperatures. We discuss the implications of our findings for coherence of qubit states in the ground states and propose methods to extend coherence times of ${\mathrm{SiV}}^{-}$ qubits.

19 pages, 6 figures

References in corpus (10)

• Quantum Computing
• Optical Quantum Computing
• Unconditional quantum teleportation between distant solid-state qubits
• Controlling the spontaneous emission of a superconducting transmon qubit
• Indistinguishable photons from separated silicon-vacancy centers in diamond
• Diamond Nanophotonics
• All-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond
• All-optical formation of coherent dark states of silicon-vacancy spins in diamond
• Deterministic coupling of a single silicon-vacancy color center to a photonic crystal cavity in diamond
• Electronic transitions of single silicon vacancy centers in the near-infrared spectral region

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