Germanium Vacancy in Diamond Quantum Memory Exceeding 20 ms
arXiv:2308.09666 · doi:10.1103/PhysRevLett.132.026901
Abstract
Negatively charged group-IV defects in diamond show great potential as quantum network nodes due to their efficient spin-photon interface. However, reaching sufficiently long coherence times remains a challenge. In this work, we demonstrate coherent control of germanium vacancy center (GeV) at millikelvin temperatures and extend its coherence time by several orders of magnitude to more than 20 ms. We model the magnetic and amplitude noise as an Ornstein-Uhlenbeck process, reproducing the experimental results well. The utilized method paves the way to optimized coherence times of group-IV defects in various experimental conditions and their successful applications in quantum technologies
References in corpus (14)
- The Quantum Internet
- Single-Photon Switching and Entanglement of Solid-State Qubits in an Integrated Nanophotonic System
- Universal dynamical decoupling of a single solid-state spin from a spin bath
- Silicon-Vacancy Spin Qubit in Diamond: A Quantum Memory Exceeding 10 ms with Single-Shot State Readout
- Robust dynamical decoupling for quantum computing and quantum memory
- Electron-phonon processes of the silicon-vacancy centre in diamond
- Robust multi-qubit quantum network node with integrated error detection
- All-optical control of the silicon-vacancy spin in diamond at millikelvin temperatures
- Arbitrarily Accurate Pulse Sequences for Robust Dynamical Decoupling
- Optimal pulse spacing for dynamical decoupling in the presence of a purely-dephasing spin-bath
- Spurious harmonic response of multipulse quantum sensing sequences
- Narrow-linewidth tin-vacancy centers in a diamond waveguide
- Fully robust qubit in atomic and molecular three-level systems
- Rephasing efficiency of sequences of phased pulses in spin-echo and light-storage experiments
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- A Concise Primer on Solid-State Quantum Emitters
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- Optical probing of phononic properties of a tin-vacancy color center in diamond
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