Strongly Anisotropic Spin Relaxation in the Neutral Silicon Vacancy Center in Diamond
arXiv:1710.03196 · doi:10.1103/PhysRevB.98.235140
Abstract
Color centers in diamond are a promising platform for quantum technologies, and understanding their interactions with the environment is crucial for these applications. We report a study of spin- lattice relaxation (T1) of the neutral charge state of the silicon vacancy center in diamond. Above 20 K, T1 decreases rapidly with a temperature dependence characteristic of an Orbach process, and is strongly anisotropic with respect to magnetic field orientation. As the angle of the magnetic field is rotated relative to the symmetry axis of the defect, T1 is reduced by over three orders of magnitude. The electron spin coherence time (T2) follows the same temperature dependence but is drastically shorter than T1. We propose that these observations result from phonon-mediated transitions to a low lying excited state that are spin conserving when the magnetic field is aligned with the defect axis, and we discuss likely candidates for this excited state.
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Cited by in corpus (12)
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- Observation of an environmentally insensitive solid state spin defect in diamond
- Cavity quantum electrodynamics with color centers in diamond
- Optically detected magnetic resonance in neutral silicon vacancy centers in diamond via bound exciton states
- Temperature-dependent spin-lattice relaxation of the nitrogen-vacancy spin triplet in diamond
- A telecom O-band emitter in diamond
- Terahertz Emission From Diamond Nitrogen-Vacancy Centers
- Hybrid III-V diamond photonic platform for quantum nodes based on neutral silicon vacancy centers in diamond
- Precise high-fidelity electron-nuclear spin entangling gates in NV centers via hybrid dynamical decoupling sequences
- Effect of phonons on the electron spin resonance absorption spectrum
- Qubit guidelines for solid-state spin defects
- The product Jahn-Teller effect in the neutral group-IV--vacancy quantum bits in diamond