Room-temperature photo-chromism of silicon vacancy centers in CVD diamond

Abstract

The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly different photo-luminescence rates. Here, we use confocal fluorescence microscopy to activate and probe charge interconversion between all three charge states under ambient conditions. In particular, we witness the formation of SiV0 via the two-step capture of diffusing, photo-generated holes, a process we expose both through direct SiV0 fluorescence measurements at low temperatures and confocal microscopy observations in the presence of externally applied electric fields. Further, we show that continuous red illumination induces the converse process, first transforming SiV0 into SiV-, then into SiV2-. Our results shed light on the charge dynamics of SiV and promise opportunities for nanoscale sensing and quantum information processing.

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Cited by in corpus (4)

• Fast optoelectronic charge state conversion of silicon vacancies in diamond
• Manipulating the Charge State of Spin Defects in Hexagonal Boron Nitride
• Photo-induced charge state dynamics of the neutral and negatively charged silicon vacancy centers in room-temperature diamond
• Wavelength dependence of nitrogen-vacancy center charge cycling