Fast optoelectronic charge state conversion of silicon vacancies in diamond

Abstract

Group IV vacancy color centers in diamond are promising spin-photon interfaces with strong potential for applications for photonic quantum technologies. Reliable methods for controlling and stabilizing their charge state are urgently needed for scaling to multi-qubit devices. Here, we manipulate the charge state of silicon vacancy (SiV) ensembles by combining luminescence and photo-current spectroscopy. We controllably convert the charge state between the optically active SiV${}^{-}$ and dark SiV${}^{2-}$ with MHz rates and 90% contrast by judiciously choosing the local potential applied to in-plane surface electrodes and the laser excitation wavelength. We observe intense SiV${}^{-}$ photoluminescence under hole-capture, measure the intrinsic conversion time from the dark SiV${}^{2-}$ to the bright SiV${}^{-}$ to be 36.4(6.7)ms and demonstrate how it can be enhanced by a factor of $10^5$ via optical pumping. Moreover, we obtain new information on the defects that contribute to photo-conductivity, indicating the presence of substitutional nitrogen and divacancies.

arXiv comment5 figures

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Cited by in corpus (2)

• Electrically-triggered spin-photon devices in silicon
• Lifetime-Limited and Tunable Emission from Charge-Stabilized Nickel Vacancy Centers in Diamond