Neutral silicon vacancy centers in undoped diamond via surface control

Abstract

Neutral silicon vacancy centers (SiV0) in diamond are promising candidates for quantum networks because of their long spin coherence times and stable, narrow optical transitions. However, stabilizing SiV0 requires high purity, boron doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage chemical processing and annealing in a hydrogen environment to realize reversible and highly stable charge state tuning in undoped diamond. The resulting SiV0 centers display optically detected magnetic resonance and bulk-like optical properties. Controlling the charge state tuning via surface termination offers a route for scalable technologies based on SiV0 centers, as well as charge state engineering of other defects.

References in corpus (19)

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• Single SiV${}^{-}$ centers in low-strain nanodiamonds with bulk-like spectral properties and nano-manipulation capabilities

Cited by in corpus (8)

• Diamond Integrated Quantum Photonics: A Review
• Diamond Surface Functionalization via Visible Light-Driven C-H Activation for Nanoscale Quantum Sensing
• Room-temperature photo-chromism of silicon vacancy centers in CVD diamond
• Fast optoelectronic charge state conversion of silicon vacancies in diamond
• Photo-induced charge state dynamics of the neutral and negatively charged silicon vacancy centers in room-temperature diamond
• Scalable construction of hybrid quantum photonic cavities
• Photoactivation of color centers induced by laser irradiation in ion-implanted diamond
• Extended T2 times of shallow implanted NV in chemically mechanically polished diamond