Narrow-linewidth homogeneous optical emitters in diamond nanostructures via silicon ion implantation

Abstract

The negatively-charged silicon-vacancy (${\mathrm{SiV}}^{-}$) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum information protocols. Until now, ${\mathrm{SiV}}^{-}$ centers with narrow optical linewidths and small inhomogeneous distributions of ${\mathrm{SiV}}^{-}$ transition frequencies have only been reported in samples doped with silicon during diamond growth. We present a technique for producing implanted ${\mathrm{SiV}}^{-}$ centers with nearly lifetime-limited optical linewidths and a small inhomogeneous distribution. These properties persist after nanofabrication, paving the way for incorporation of high-quality ${\mathrm{SiV}}^{-}$ centers into nanophotonic devices.

9 pages, 5 figures. (v3) Updated to make consistent with journal version. Some material from SI incorporated into main text. Minor stylistic updates compared to previous version

References in corpus (15)

• Quantum Computing
• Experimental loophole-free violation of a Bell inequality using entangled electron spins separated by 1.3 km
• Photonic quantum technologies
• Unconditional quantum teleportation between distant solid-state qubits
• Indistinguishable photons from separated silicon-vacancy centers in diamond
• Stark shift control of single optical centers in diamond
• All-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond
• High-Q optical nanocavities in bulk single-crystal diamond
• Electron-phonon processes of the silicon-vacancy centre in diamond
• Low Temperature Studies of Charge Dynamics of Nitrogen-Vacancy Defect in Diamond
• Low temperature investigations of single silicon vacancy colour centres in diamond
• Deterministic coupling of a single silicon-vacancy color center to a photonic crystal cavity in diamond
• All-optical formation of coherent dark states of silicon-vacancy spins in diamond
• Resource costs for fault-tolerant linear optical quantum computing
• Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers

Cited by in corpus (54)

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• Strain engineering of the silicon-vacancy center in diamond
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• Phononic waveguide assisted steady state entanglement of SiV centers
• Neutral silicon vacancy centers in undoped diamond via surface control
• Simulation of topological phases with color center arrays in phononic crystals
• Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide
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• Shallow Silicon Vacancy Centers with lifetime-limited optical linewidths in Diamond Nanostructures
• Quantum interference of resonance fluorescence from Germanium-vacancy color centers in diamond
• Quantum Photonic Circuits Integrated with Color Centers in Designer Nanodiamonds
• Cryogenic platform for coupling color centers in diamond membranes to a fiberbased microcavity
• Engineering Phonon-Qubit Interactions using Phononic Crystals
• Mechanical tunability of an ultra-narrow spectral feature with uniaxial stress
• Optical Entanglement of Distinguishable Quantum Emitters
• Coherent microwave, optical, and mechanical quantum control of spin qubits in diamond
• Fast optoelectronic charge state conversion of silicon vacancies in diamond
• A high repetition deterministic single ion source
• Optical control protocols for high-fidelity spin rotations of single SiV${}^{-}$ and SnV${}^{-}$ centers in diamond
• Superradiant diamond color center arrays coupled to concave plasmonic nanoresonators
• Thermal tuning of a fiber-integrated Fabry-Pérot cavity
• Investigation of the Stark Effect on a Centrosymmetric Quantum Emitter in Diamond
• Perovskite Nanocrystals as Emerging Single-Photon Emitters: Progress, Challenges, and Opportunities
• Metalens formed by structured arrays of atomic emitters