Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth

Abstract

Group-IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. Future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group-IV impurity atoms, which are otherwise promising because of their predicted long spin coherence times without a dilution refrigerator. For example, when applied to the negatively charged tin-vacancy (SnV${}^{-}$) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. Here we demonstrate a novel method to generate site-controlled SnV${}^{-}$ centers with clean bulk spectra. We shallowly implant Sn ions through a thin implantation mask and subsequently grow a layer of diamond via chemical vapor deposition. This method can be extended to other color centers and integrated with quantum nanophotonic device fabrication.

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• Novel color center platforms enabling fundamental scientific discovery
• Quantum Information Processing With Integrated Silicon Carbide Photonics
• Electrical tuning of tin-vacancy centers in diamond
• Versatile Direct Writing of Dopants in a Solid State Host Through Recoil Implantation
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• Heralded initialization of charge state and optical transition frequency of diamond tin-vacancy centers
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• Optimizing the Electrical Interface for Large-Scale Color-Center Quantum Processors
• Qubit guidelines for solid-state spin defects
• Investigation of the Stark Effect on a Centrosymmetric Quantum Emitter in Diamond
• A Concise Primer on Solid-State Quantum Emitters
• Spectral emission dependence of tin-vacancy centers in diamond from thermal processing and chemical functionalization