Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Abstract

Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In particular, we show nearly transform limited photon emission and record spin coherence times for single defects generated via ion implantation and in triangular cross section waveguides. For the latter, we show further controlled operations on nearby nuclear spin qubits, which is crucial for fault-tolerant quantum information distribution based on cavity quantum electrodynamics.

18 pages, 4 figures

References in corpus (6)

• Realization of a multi-node quantum network of remote solid-state qubits
• Detection and control of individual nuclear spins using a weakly coupled electron spin
• Engineering near infrared single photon emitters in ultrapure silicon carbide
• Optical parametric oscillation in silicon carbide nanophotonics
• Cavity quantum electrodynamics with color centers in diamond
• Narrow-linewidth tin-vacancy centers in a diamond waveguide

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