Effect of Helium Ion Implantation on 3C-SiC Nanomechanical String Resonators

Abstract

Hybrid quantum devices enable novel functionalities by combining the benefits of different subsystems. Particularly, point defects in nanomechanical resonators made of diamond or silicon carbide (SiC) have been proposed for precise magnetic field sensing and as versatile quantum transducers. However, the realization of a hybrid system may involve tradeoffs in the performance of the constituent subsystems. In a spin-mechanical system, the mechanical properties of the resonator may suffer from the presence of engineered defects in the crystal lattice. This may severely restrict the performance of the resulting device and needs to be carefully explored. Here, we focus on the impact of defects on high Q nanomechanical string resonators made of pre-stressed 3C-SiC grown on Si(111). We use helium ion implantation to create point defects and study their accumulated effect on the mechanical performance. Using Euler-Bernoulli beam theory, we present a method to determine Young's modulus and the pre-stress of the strings. We find that Young's modulus is not modified by implantation. Under implantation doses relevant for single defect or defect ensemble generation, both tensile stress and damping rate also remain unaltered. For higher implantation dose, both exhibit a characteristic change.

References in corpus (13)

• Quantum technologies with hybrid systems
• Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
• Topical Review: Spins and mechanics in diamond
• Materials challenges for quantum technologies based on color centers in diamond
• Strained crystalline nanomechanical resonators with ultralow dissipation
• Towards European Standards for Quantum Technologies
• Coupling spins to nanomechanical resonators: Toward quantum spin-mechanics
• High-Strength Amorphous Silicon Carbide for Nanomechanics
• Tensile strained $I{n}_{x}G{a}_{1-x}P$ membranes for cavity optomechanics
• Determining Young's modulus via the eigenmode spectrum of a nanomechanical string resonator
• Maskless Generation of Single Silicon Vacancy Arrays in Silicon Carbide by a Focused He+ Ion Beam
• Universal length dependence of tensile stress in nanomechanical string resonators
• Ultralong-term high-density data storage with atomic defects in SiC