Materials challenges for quantum technologies based on color centers in diamond

Abstract

Emerging quantum technologies require precise control over quantum systems of increasing complexity. Defects in diamond, particularly the negatively charged nitrogen-vacancy (NV) center, are a promising platform with the potential to enable technologies ranging from ultra-sensitive nanoscale quantum sensors, to quantum repeaters for long distance quantum networks, to simulators of complex dynamical processes in many-body quantum systems, to scalable quantum computers. While these advances are due in large part to the distinct material properties of diamond, the uniqueness of this material also presents difficulties, and there is a growing need for novel materials science techniques for characterization, growth, defect control, and fabrication dedicated to realizing quantum applications with diamond. In this review we identify and discuss the major materials science challenges and opportunities associated with diamond quantum technologies.

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Cited by in corpus (15)

• Optically coherent nitrogen-vacancy defect centers in diamond nanostructures
• Photon emission correlation spectroscopy as an analytical tool for quantum defects
• A telecom O-band emitter in diamond
• Electric-Field Programmable Spin Arrays for Scalable Quantum Repeaters
• Spin coherence in strongly coupled spin baths in quasi-two-dimensional layers
• Coherence properties of NV-center ensembles in diamond coupled to an electron-spin bath
• Optically-Trapped Nanodiamond-Relaxometry Detection of Nanomolar Paramagnetic Spins in Aqueous Environments
• Thin films as practical quantum materials: a status quo and beyond
• Laser-induced spectral diffusion of T centers in silicon nanophotonic devices
• Extended T2 times of shallow implanted NV in chemically mechanically polished diamond
• Trans-dimensional Hamiltonian model selection and parameter estimation from sparse, noisy data
• Effect of Helium Ion Implantation on 3C-SiC Nanomechanical String Resonators
• High-throughput spin-bath characterization of spin-defects in semiconductors
• Reducing dislocation defect levels via sub-melt nanosecond pulsed-laser induced densification of diamond
• Creation of Depth-Confined, Shallow Nitrogen-Vacancy Centers in Diamond With Tunable Density