Precise characterization of a silicon carbide waveguide fiber interface

Abstract

Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into efficient nanophotonic structures which couple the emission of photons to a well defined waveguide mode can significantly enhance the photon detection efficiency. In addition, interfacing this waveguide to a classical fiber network is of similar importance to detect the photons and perform experiments. Here, we show a waveguide fiber interface in SiC. By careful measurements we determine efficiencies exceeding 93 % for the transfer of photons from SiC nanobeams to fibers. We use this interface to create a bright single photon source based on waveguide integrated V2 defects in 4H-SiC and achieve an overall photon count rate of 181 kilo-counts per second. We observe and quantify the strain induced shift of the ground state spin states and demonstrate coherent control of the electron spin with a coherence time of T2=42.5 $\mu$s.

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Cited by in corpus (5)

• Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity
• Fluorescence enhancement of single V2 centers in a 4H-SiC cavity antenna
• Scalable registration of single quantum emitters within solid immersion lenses through femtosecond laser writing
• Impact of Surface Treatment on Noise in PL-Measurements of Silicon Vacancies in 4H-SiC Lateral pin-Diodes
• Waveguide-integrated colour centres in silicon carbide with broadband photonic crystal reflectors for efficient readout