55 citations · 151 across the 11 of their papers we have counts for
12 papers
Scalable integration of silicon carbide color centers into nanophotonic structures
Raphael Wörnle, Jonas Schmid, Dennis Grüner +7
Color centers in silicon carbide are a promising platform for quantum technologies, offering long-coherence electron and nuclear spins for storing and manipulating quantum informat…
Electrically tunable, two-photon interference from remote silicon-vacancy centers in industrial silicon carbide
Fedor Dzmitryevich Hrunski, Daniel Scheller, Maximilian Hollendonner +8
Distributed quantum networks rely on spatially separated, independently operated quantum systems as network nodes, whose emitted photons must be interfered with high visibility to…
Efficient formation and identification of single emitters in 4H-SiC following maskless heavy ion implantation
S. Eserin, L. K. S. Zimmermann, E. Schneider +12
Single photon emitters in silicon carbide (SiC) are a leading platform for scalable quantum technologies. Recent interest has focused on oxygen-vacancy-related emitters, which show…
RF-free driving of nuclear spins with color centers in silicon carbide
Raphael Wörnle, Jonathan Körber, Timo Steidl +5
Color centers that enable nuclear-spin control without RF fields offer a powerful route towards simplified and scalable quantum devices. Such capabilities are especially valuable f…
Efficient nuclear spin - photon entanglement with optical routing
Javid Javadzade, Majid Zahedian, Florian Kaiser +2
Quantum networks and distributed quantum computers rely on entanglement generation between photons and long-lived quantum memories. For large-scale architectures, one of the most c…
Photoluminescence of Femtosecond Laser-irradiated Silicon Carbide
Y. Abdedou, A. Fuchs, P. Fuchs +8
Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active po…
Precise characterization of a silicon carbide waveguide fiber interface
Marcel Krumrein, Raphael Nold, Flavie Davidson-Marquis +13
Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into effic…
High fidelity optical readout of a nuclear spin qubit in Silicon Carbide
Erik Hesselmeier, Oliver von Berg, Pierre Kuna +7
Quantum state readout is a key requirement for a successful qubit platform. In this work we demonstrate a high fidelity quantum state readout of a V2 center nuclear spin based on a…
Measuring nuclear spin qubits by qudit-enhanced spectroscopy in Silicon Carbide
Erik Hesselmeier, Pierre Kuna, István Takács +8
Nuclear spins with hyperfine coupling to single electron spins are highly valuable quantum bits. In this work we probe and characterise the particularly rich nuclear spin environme…
Spectral stability of V2 centres in sub-micron 4H-SiC membranes
Jonah Heiler, Jonathan Körber, Erik Hesselmeier +9
Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising…
Three-dimensional imaging of integrated-circuit activity using quantum defects in diamond
Marwa Garsi, Rainer Stöhr, Andrej Denisenko +8
The continuous scaling of semiconductor-based technologies to micron and sub-micron regimes has resulted in higher device density and lower power dissipation. Many physical phenome…
Low temperature optical characterization of near infrared single photon emitters in nanodiamonds
P. Siyushev, V. Jacques, I. Aharonovich +8
In this paper, we study the optical properties of single defects emitting in the near infrared in nanodiamonds at liquid helium temperature. The nanodiamonds are synthesized using…