Fluorescence enhancement of single V2 centers in a 4H-SiC cavity antenna
arXiv:2406.08208 · doi:10.1021/acs.nanolett.4c02162
Abstract
Solid state quantum emitters are a prime candidate in distributed quantum technologies since they inherently provide a spin-photon interface. An ongoing challenge in the field, however, is the low photon extraction due to the high refractive index of typical host materials. This challenge can be overcome using photonic structures. Here, we report the integration of V2 centers in a cavity-based optical antenna. The structure consists of a silver-coated, 135 nm thin 4H-SiC membrane functioning as a planar cavity with a broadband resonance yielding a theoretical photon collection enhancement factor of 34. The planar geometry allows us to identify over 20 single V2 centers at room temperature with a mean (maximum) count rate enhancement factor of 9 (15). Moreover, we observe 10 V2 centers with a mean absorption linewidth below 80MHz at cryogenic temperatures. These results demonstrate a photon collection enhancement that is robust to the lateral emitter position.
References in corpus (17)
- Coherent control of single spins in silicon carbide at room temperature
- Quantum information transfer using photons
- Quantum networks based on color centers in diamond
- Three megahertz photon collection rate from an NV center with millisecond spin coherence
- Single organic molecules for photonic quantum technologies
- Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
- Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast
- Experimental Generation of Spin-Photon Entanglement in Silicon Carbide
- Scalable fabrication of hemispherical solid immersion lenses in silicon carbide through grayscale hard-mask lithography
- Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide
- Single-Shot Readout of a Nuclear Spin in Silicon Carbide
- A cavity-based optical antenna for color centers in diamond
- Spectral stability of V2 centres in sub-micron 4H-SiC membranes
- Precise characterization of a silicon carbide waveguide fiber interface
- Plasmonic-enhanced bright single spin defects in silicon carbide membranes
- Bullseye dielectric cavities for photon collection from a surface-mounted quantum-light-emitter
- Characterization of single shallow silicon-vacancy centers in 4H-SiC
Cited by in corpus (4)
- Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity
- Check-probe spectroscopy of lifetime-limited emitters in bulk-grown silicon carbide
- Mechanisms and Opportunities for Tunable High-Purity Single Photon Emitters: A Review of Hybrid Perovskites and Prospects for Bright Squeezed Vacuum
- Waveguide-integrated colour centres in silicon carbide with broadband photonic crystal reflectors for efficient readout