Scalable fabrication of hemispherical solid immersion lenses in silicon carbide through grayscale hard-mask lithography

Abstract

Grayscale lithography allows the creation of micrometer-scale features with spatially-controlled height in a process that is fully compatible with standard lithography. Here, solid immersion lenses are demonstrated in silicon carbide using a novel fabrication protocol combining grayscale lithography and hard-mask techniques to allow nearly hemispherical lenses of 5 $\mu$m radius to be etched into the substrate. The technique is highly scalable and compatible with CMOS technology, and device aspect ratios can be tuned after resist patterning by controlling the chemistry of the subsequent dry etch. These results provide a low-cost, high-throughput and industrially-relevant alternative to focused ion beam milling for the creation of high-aspect-ratio, rounded microstructures.

arXiv comment9 pages, 4 + 2 supplementary figures

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Cited by in corpus (6)

• Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide
• Precise characterization of a silicon carbide waveguide fiber interface
• Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity
• Fluorescence enhancement of single V2 centers in a 4H-SiC cavity antenna
• Scalable registration of single quantum emitters within solid immersion lenses through femtosecond laser writing
• Waveguide-integrated colour centres in silicon carbide with broadband photonic crystal reflectors for efficient readout