Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing

Abstract

The negatively charged silicon monovacancy $V_{Si}^{-}$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-state quantum computation applications. Photonic crystal cavities (PCCs) can augment the optical emission of the $V_{Si}^{-}$, yet fine-tuning the defect-cavity interaction remains challenging. We report on two post-fabrication processes that result in enhancement of the $V_1^{{}^{\prime }}$ optical emission from our 1-dimensional PCCs, indicating improved coupling between the ensemble of silicon vacancies and the PCC. One process involves below bandgap illumination at 785 nm and 532 nm wavelengths and above bandgap illumination at 325 nm, carried out at times ranging from a few minutes to several hours. The other process is thermal annealing at $100^{o}C$, carried out over 20 minutes. Every process except above bandgap irradiation improves the defect-cavity coupling, manifested in augmented Purcell factor enhancement of the $V_1^{{}^{\prime }}$ zero phonon line at 77K. The below bandgap laser process is attributed to a modification of charge states, changing the relative ratio of $V_{Si}^0$ (dark state) to $V_{Si}^{-}$ (bright state), while the thermal annealing process may be explained by diffusion of carbon interstitials, $C_i$, that subsequently recombine with other defects to create additional $V_{Si}^{-}$s. Above bandgap radiation is proposed to initially convert $V_{Si}^0$ to $V_{Si}^{-}$, but also may lead to diffusion of $V_{Si}^{-}$ away from the probe area, resulting in an irreversible reduction of the optical signal. Observations of the PCC spectra allow insights into defect modifications and interactions within a controlled, designated volume and indicate pathways to improve defect-cavity interactions.

21 pages, 8 figures

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• Optical charge state control of spin defects in 4H-SiC
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