Deterministic Laser Writing of Spin Defects in Nanophotonic Cavities

Abstract

High-yield engineering and characterization of cavity-emitter coupling is an outstanding challenge in developing scalable quantum network nodes. Ex-situ defect formation processes prevent real-time defect-cavity characterization, and previous in-situ methods require further processing to improve emitter properties or are limited to bulk substrates. We demonstrate direct laser-writing of cavity-integrated spin defects using a nanosecond-pulsed above-bandgap laser. Photonic crystal cavities in 4H-silicon carbide serve as a nanoscope monitoring silicon monovacancy (V${}_{Si}^{-}$) defect formation within the $100{\text{nm}}^3$ cavity mode volume. We observe defect spin resonance, cavity-integrated photoluminescence and excited-state lifetimes consistent with conventional defect formation methods, without need for post-irradiation thermal annealing. We further find an exponential reduction in excited-state lifetime at fluences approaching the cavity amorphization threshold, and show single-shot local annealing of the intrinsic background defects at the V${}_{Si}^{-}$ formation sites. This real-time in-situ method of localized defect formation, paired with demonstration of cavity-integrated defect spins, marks an important step in engineering cavity-emitter coupling for quantum networking.

8 pages, 4 figures

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• Scalable registration of single quantum emitters within solid immersion lenses through femtosecond laser writing
• A Concise Primer on Solid-State Quantum Emitters
• Narrow magneto-optical transitions in Erbium implanted silicon carbide-on-insulator