Narrow magneto-optical transitions in Erbium implanted silicon carbide-on-insulator

Abstract

Solid state spin photon interfaces operating in the near telecom and telecom bands are a key resource for long distance quantum communication and scalable quantum networks. However, their optical transitions often suffer from spectral diffusion that hampers the generation of coherent spin photon entanglement. Here we demonstrate narrow magneto-optical transitions of erbium dopants implanted into thin film silicon carbide (SiC)-on-insulator, a viable platform for industrially scalable quantum networks. Using high-resolution resonant spectroscopy and spectral hole burning at cryogenic temperatures, we reveal sub megahertz homogeneous linewidths and identify two lattice sites that best stabilise the emitters. We further characterise their optical lifetimes and magneto-optical response, establishing erbium doped SiC-on-insulator as a robust and scalable platform for on-chip quantum networks.

20 pages, 4 figures

References in corpus (37)

• The Quantum Internet
• High-fidelity projective readout of a solid-state spin quantum register
• Coherent control of single spins in silicon carbide at room temperature
• Realization of a multi-node quantum network of remote solid-state qubits
• Isolated electron spins in silicon carbide with millisecond-coherence times
• Coherence time of over a second in a telecom-compatible quantum memory storage material
• Entanglement of Nanophotonic Quantum Memory Nodes in a Telecom Network
• High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
• Electrical and optical control of single spins integrated in scalable semiconductor devices
• Coherent control and single-shot readout of a rare-earth ion embedded in a nanophotonic cavity
• Optical quantum nondemolition measurement of a solid-state spin without a cycling transition
• Integrated quantum photonics with silicon carbide: challenges and prospects
• Entanglement and control of single quantum memories in isotopically engineered silicon carbide
• Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
• Optical addressing of an individual erbium ion in silicon
• Single artificial atoms in silicon emitting at telecom wavelengths
• Purcell enhancement of a single silicon carbide color center with coherent spin control
• Locking of electron spin coherence over fifty milliseconds in natural silicon carbide
• Indistinguishable telecom band photons from a single erbium ion in the solid state
• Quantum frequency conversion to telecom of single photons from a nitrogen-vacancy center in diamond
• Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
• Erbium dopants in silicon nanophotonic waveguides
• Purcell enhancement of single-photon emitters in silicon
• Inverse-designed Silicon Carbide Quantum and Nonlinear Photonics
• Narrow optical linewidths in erbium implanted in TiO${}_2$
• Deterministic Laser Writing of Spin Defects in Nanophotonic Cavities
• Experimental Generation of Spin-Photon Entanglement in Silicon Carbide
• Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide
• Purcell enhancement of erbium ions in TiO${}_2$ on silicon nanocavities
• Optical single-shot readout of spin qubits in silicon
• Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
• Sub-megahertz homogeneous linewidth for Er in Si via in situ single photon detection
• The Zeeman and hyperfine interactions of a single ${}^{167}E{r}^{3+}$ ion in Si
• High resolution spectroscopy of individual erbium ions in strong magnetic fields
• Characterization of the spin and crystal field Hamiltonian of erbium dopants in silicon
• Luminescence thermometry based on photon emitters in nanophotonic silicon waveguides
• Photo-luminescence properties of ion implanted Er3+-defects in 4H-SiCOI towards integrated quantum photonics