Narrow optical linewidths in erbium implanted in TiO
arXiv:1909.06304 · doi:10.1021/acs.nanolett.9b03831
Abstract
Atomic and atom-like defects in the solid-state are widely explored for quantum computers, networks and sensors. Rare earth ions are an attractive class of atomic defects that feature narrow spin and optical transitions that are isolated from the host crystal, allowing incorporation into a wide range of materials. However, the realization of long electronic spin coherence times is hampered by magnetic noise from abundant nuclear spins in the most widely studied host crystals. Here, we demonstrate that Er ions can be introduced via ion implantation into TiO, a host crystal that has not been studied extensively for rare earth ions and has a low natural abundance of nuclear spins. We observe efficient incorporation of the implanted Er into the Ti site (40% yield), and measure narrow inhomogeneous spin and optical linewidths (20 and 460 MHz, respectively) that are comparable to bulk-doped crystalline hosts for Er. This work demonstrates that ion implantation is a viable path to studying rare earth ions in new hosts, and is a significant step towards realizing individually addressed rare earth ions with long spin coherence times for quantum technologies.
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Cited by in corpus (19)
- Semiconductor Qubits In Practice
- Optical quantum nondemolition measurement of a solid-state spin without a cycling transition
- Indistinguishable telecom band photons from a single erbium ion in the solid state
- Parallel single-shot measurement and coherent control of solid-state spins below the diffraction limit
- Cavity-enhanced quantum network nodes
- Erbium-Implanted Materials for Quantum Communication Applications
- Coherent and Purcell-enhanced emission from erbium dopants in a cryogenic high-Q resonator
- Narrow optical transitions in erbium-implanted silicon waveguides
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- Non-Equilibrium Origin of Native Ring Anisotropy in Amorphous Systems