Isolation of individual Er quantum emitters in anatase TiO${}_2$ on Si photonics

Abstract

Defects and dopant atoms in solid state materials are a promising platform for realizing single photon sources and quantum memories, which are the basic building blocks of quantum repeaters needed for long distance quantum networks. In particular, trivalent erbium (Er${}^{3+}$) is of interest because it couples C-band telecom optical transitions with a spin-based memory platform. In order to produce quantum repeaters at the scale required for a quantum internet, it is imperative to integrate these necessary building blocks with mature and scalable semiconductor processes. In this work, we demonstrate the optical isolation of single Er${}^{3+}$ ions in CMOS-compatible titanium dioxide (TiO${}_2$) thin films monolithically integrated on a silicon-on-insulator (SOI) photonics platform. Our results demonstrate a first step toward the realization of a monolithically integrated and scalable quantum photonics package based on Er${}^{3+}$ doped thin films.

References in corpus (8)

• Indistinguishable photons from separated silicon-vacancy centers in diamond
• Quantum storage of entangled telecom-wavelength photons in an erbium-doped optical fibre
• Indistinguishable telecom band photons from a single erbium ion in the solid state
• Purcell enhancement of single-photon emitters in silicon
• Coherent control of a nuclear spin via interactions with a rare-earth ion in the solid-state
• Purcell enhancement of erbium ions in TiO${}_2$ on silicon nanocavities
• A perspective on the pathway to a scalable quantum internet using rare-earth ions
• Development of a Scalable Quantum Memory Platform -- Materials Science of Erbium-Doped TiO${}_2$ Thin Films on Silicon

Cited by in corpus (1)

• Erbium Quantum Memory Platform with Long Optical Coherence via Back-End of Line Deposition on Foundry-Fabricated Photonics