Purcell enhancement of erbium ions in TiO${}_2$ on silicon nanocavities

Abstract

Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects such as erbium suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Many of the traditional hosts for erbium ions are not amenable to direct incorporation with existing integrated photonics platforms, limiting scalable fabrication of qubit-based devices. Here we present a scalable approach towards CMOS-compatible telecom qubits by using erbium-doped titanium dioxide thin films grown atop silicon-on-insulator substrates. From this heterostructure, we have fabricated one-dimensional photonic crystal cavities demonstrating quality factors in excess of $5\times 10^4$ and corresponding Purcell-enhanced optical emission rates of the erbium ensembles in excess of 200. This easily fabricated materials platform represents an important step towards realizing telecom quantum memories in a scalable qubit architecture compatible with mature silicon technologies.

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References in corpus (12)

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Cited by in corpus (8)

• A perspective on the pathway to a scalable quantum internet using rare-earth ions
• Optical and spin coherence of Er${}^{3+}$ in epitaxial CeO${}_2$ on silicon
• Room-temperature addressing of single rare-earth atoms in optical fiber
• Enhancing two-photon spontaneous emission in rare earths using graphene and graphene nanoribbons
• Isolation of individual Er quantum emitters in anatase TiO${}_2$ on Si photonics
• Erbium Quantum Memory Platform with Long Optical Coherence via Back-End of Line Deposition on Foundry-Fabricated Photonics
• Narrow magneto-optical transitions in Erbium implanted silicon carbide-on-insulator
• Nanocavity-mediated Purcell enhancement of Er in TiO${}_2$ thin films grown via atomic layer deposition