activity
20222026
most citedDeterministic Laser Writing of Spin Defects in Nanophotonic Cavities

41 citations · 44 across the 11 of their papers we have counts for

collaborators

12 papers

quant-ph2026

Resolving and resetting the charge environment of single T-centers in silicon p-i-n waveguides

Chaoshen Zhang, Hanbin Song, Lukasz Komza +6

The silicon T-center is a telecom-band spin-photon interface in a manufacturable photonics platform. In nanophotonic devices, however, its optical linewidth is broadened by a fluct…

quant-ph2026

Laser-induced creation of coherent V2 centers in bulk-grown silicon carbide

L. J. Feije, G. M. Timmer, Y. Hu +9

Solid-state spin defects are promising qubits for quantum network nodes. A key challenge towards larger networks is creating defects with high yield into nanophotonic devices, whil…

cond-mat.mtrl-sci2026

The Evolution of Magnetism in a Thin Film Pyrochlore Ferromagnetic Insulator

Margaret A. Anderson, Megan E. Goh, Yang Zhang +19

The pyrochlore vanadates are compelling candidates for next-generation dissipationless devices. Lu2V2O7 and Y2V2O7 are ferromagnetic insulators (Tc ~ 70 K) that are believed to exh…

cond-mat.mtrl-sci2026

Heterogeneous Transfer of Thin Film BaTiO onto Silicon for Device Fabrication

Temazulu S. Zulu, Larissa B. Little, Aaron M. Day +9

Thin film BaTiO has one of the highest known Pockels coefficients (>1200 pm/V), making it an attractive material for use in electro-optic devices. It is advantageous to integra…

physics.app-ph2025★ 1 cited

A Suspended 4H-Silicon Carbide Membrane Platform for Defect Integration into Quantum Devices

Amberly H. Xie, Aaron M. Day, Jonathan R. Dietz +6

4H-silicon carbide is a promising platform for solid-state quantum technology due to its commercial availability as a wide bandgap semiconductor and ability to host numerous spin-a…

cond-mat.mes-hall2025

Ultracoherent self-assembled diamond nanomechanics reveals superfluid dynamics

Guanhao Huang, Chang Jin, Sophie Weiyi Ding +9

From gravitational-wave detection, protein force microscopy, to exploration of quantum-classical boundaries, many anticipated discoveries in fundamental science require improving m…

quant-ph2025★ 1 cited

Probing negative differential resistance in silicon with a P-I-N diode-integrated T center ensemble

Aaron M. Day, Chaoshen Zhang, Chang Jin +6

Solid-state defect quantum systems are exquisite probes of their local charge environment. Nonlinear dynamical electric fields in solids are challenging to characterize directly, c…

physics.app-ph2024

Selective Undercut of Undoped Optical Membranes for Spin-Active Color Centers in 4H-SiC

Jonathan R. Dietz, Aaron M. Day, Amberly Xie +1

Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. Howeve…

quant-ph2023

Electrical Manipulation of Telecom Color Centers in Silicon

Aaron M. Day, Madison Sutula, Jonathan R. Dietz +4

Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In thi…

quant-ph2023★ 1 cited

Deterministic Creation of Strained Color Centers in Nanostructures via High-Stress Thin Films

Daniel R. Assumpcao, Chang Jin, Madison Sutula +11

Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that the…

physics.app-ph2022★ 41 cited

Deterministic Laser Writing of Spin Defects in Nanophotonic Cavities

Aaron M. Day, Jonathan R. Dietz, Madison Sutula +2

High-yield engineering and characterization of cavity-emitter coupling is an outstanding challenge in developing scalable quantum network nodes. Ex-situ defect formation processes…

physics.app-ph2022

Spin-Acoustic Control of Silicon Vacancies in 4H Silicon Carbide

Jonathan R. Dietz, Boyang Jiang, Aaron M. Day +2

We demonstrate direct, acoustically mediated spin control of naturally occurring negatively charged silicon monovacancies (V) in a high quality factor Lateral Overtone Bul…