Bright single photon sources in lateral silicon carbide light emitting diodes

Abstract

Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow to transduce and collect quantum information over a long distance via photons as so called flying qubits. In addition, substrates like silicon carbide provides an excellent material platform for electronic devices. In this work we combine these two features and show that one can drive single photon emitters within a silicon carbide p-i-n-diode. To achieve this, we specifically designed a lateral oriented diode. We find a variety of new color centers emitting non-classical lights in VIS and NIR range. One type of emitter can be electrically excited, demonstrating that silicon carbide can act as an ideal platform for electrically controllable single photon sources.

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Cited by in corpus (11)

• Hybrid integration methods for on-chip quantum photonics
• Electrical and optical control of single spins integrated in scalable semiconductor devices
• Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast
• Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
• Novel color center platforms enabling fundamental scientific discovery
• Local vibrational modes of Si vacancy spin qubits in SiC
• Deterministic Laser Writing of Spin Defects in Nanophotonic Cavities
• Superinjection of holes in homojunction diodes based on wide-bandgap semiconductors
• Suppression of the optical linewidth and spin decoherence of a quantum spin center in a $p$$-$$n$ diode
• Broadband single-mode planar waveguides in monolithic 4H-SiC
• Gate-tunable single-photon electroluminescence of color centers in silicon carbide