Electrical excitation of silicon-vacancy centers in single crystal diamond

Abstract

Electrically driven emission from negatively charged silicon-vacancy, (SiV)- centres in single crystal diamond is demonstrated. The SiV centres were generated using ion implantation into an intrinsic (i) region of a p-i-n single crystal diamond diode. Both electroluminescence and the photoluminescence signals exhibit the typical emission that is attributed to the (SiV)- centres. Under forward and reversed biased PL measurements, no signal from the neutral (SiV)0 defect could be observed. The realization of electrically driven (SiV)- emission is promising for scalable nanophotonics devices employing colour centres in single crystal diamond.

References in corpus (11)

• Photonic quantum technologies
• Indistinguishable photons from separated silicon-vacancy centers in diamond
• Single photon emission from silicon-vacancy centres in CVD-nano-diamonds on iridium
• Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser
• Diamond Nanophotonics
• One- and two-dimensional photonic crystal micro-cavities in single crystal diamond
• Sub-Natural Linewidth Single Photons from a Quantum Dot
• Integrated diamond networks for quantum nanophotonics
• Optical signatures of silicon-vacancy spins in diamond
• Nanodiamonds with silicon vacancy defects for non-toxic photostable fluorescent labeling of neural precursor cells
• Electronic transitions of single silicon vacancy centers in the near-infrared spectral region

Cited by in corpus (11)

• Single-photon emitting diode in silicon carbide
• Ultrabright single-photon source on diamond with electrical pumping
• Novel color center platforms enabling fundamental scientific discovery
• Bright single photon sources in lateral silicon carbide light emitting diodes
• Robust luminescence of the silicon-vacancy center in diamond at high temperatures
• Dynamics of single-photon emission from electrically pumped color centers
• Electrical stimulation of single-photon emission from nitrogen-vacancy centers in diamond with sub-superficial graphitic electrodes
• All-optical nanoscale thermometry based on silicon-vacancy centers in detonation nanodiamonds
• Silicon-vacancy color centers in phosphorus-doped diamond
• Superinjection in diamond homojunction P-I-N
• Superinjection in diamond p-i-n diodes: bright single-photon electroluminescence of color centers beyond the doping limit