Dynamics of single-photon emission from electrically pumped color centers

Abstract

Low-power, high-speed and bright electrically driven true single-photon sources, which are able to operate at room temperature, are vital for the practical realization of quantum communication networks and optical quantum computations. Color centers in semiconductors are currently the best candidates, however, in spite of their intensive study in the past decade, the behavior of color centers in electrically controlled systems is poorly understood. Here we present a physical model and establish a theoretical approach to address single-photon emission dynamics of electrically pumped color centers, which interprets experimental results. We support our analysis with self-consistent numerical simulations of a single-photon emitting diode based on a single nitrogen-vacancy center in diamond and predict the second-order autocorrelation function and other emission characteristics. Our theoretical findings demonstrate remarkable agreement with the experimental results and pave the way to the understanding of single-electron/single-photon processes in semiconductors.

5 figures

References in corpus (8)

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Cited by in corpus (7)

• Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
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• Superinjection in diamond p-i-n diodes: bright single-photon electroluminescence of color centers beyond the doping limit
• Approaching single-photon pulses
• Suppression of the optical linewidth and spin decoherence of a quantum spin center in a $p$$-$$n$ diode
• Gate-tunable single-photon electroluminescence of color centers in silicon carbide
• The optical properties of dibenzoterrylene