Photophysics of single silicon vacancy centers in diamond: implications for single photon emission

Abstract

Single silicon vacancy (SiV) color centers in diamond have recently shown the ability for high brightness, narrow bandwidth, room temperature single photon emission. This work develops a model describing the three level population dynamics of single SiV centers in diamond nanocrystals on iridium surfaces including an intensity dependent de-shelving process. Furthermore, we investigate the brightness and photostability of single centers and find maximum single photon rates of 6.2 Mcps under continuous excitation. We investigate the collection efficiency of the fluorescence and estimate quantum efficiencies of the SiV centers.

15 pages, 7 figures, version 2 accepted for publication in Optics Express

References in corpus (1)

• Electronic transitions of single silicon vacancy centers in the near-infrared spectral region

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