Bright and photostable single-photon emitter in silicon carbide

Abstract

Single-photon sources are of paramount importance in quantum communication, quantum computation, and quantum metrology. In particular, there is great interest in realizing scalable solid-state platforms that can emit triggered photons on demand to achieve scalable nanophotonic networks. We report on a visible-spectrum single-photon emitter in 4H silicon carbide (SiC). The emitter is photostable at room and low temperatures, enabling photon counts per second in excess of 2$\times$10${}^6$ from unpatterned bulk SiC. It exists in two orthogonally polarized states, which have parallel absorption and emission dipole orientations. Low-temperature measurements reveal a narrow zero phonon line (linewidth $<0.1$nm) that accounts for $>30$% of the total photoluminescence spectrum.

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• Scalable Quantum Photonics with Single Color Centers in Silicon Carbide
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• Bright room temperature single photon source at telecom range in cubic silicon carbide
• High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide
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• Coherent control of defect spins in silicon carbide above 550 K
• Silicon nitride waveguides with intrinsic single-photon emitters for integrated quantum photonics
• Chip-integrated plasmonic cavity-enhanced single nitrogen-vacancy center emission
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• Temperature dependence of divacancy spin coherence in implanted silicon carbide
• Decoherence by Optical Phonons in GaN Defect Single-Photon Emitters
• Advancing the hBN Defects Database through Photophysical Characterization of Bulk hBN
• Temperature-Dependent Emission Spectroscopy of Quantum Emitters in Hexagonal Boron Nitride
• Purcell-enhanced lifetime modulation of quantum emitters as a probe of local refractive index changes
• Near-unity collection efficiency from quantum emitters in bulk diamond using chirped circular dielectric gratings
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• Top-down fabrication of high-uniformity nanodiamonds by self-assembled block copolymer masks