Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

Abstract

Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1,400 nm diameters. We obtain high collection efficiency, up to 22 kcounts/s optical saturation rates from a single silicon vacancy center, while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.

18 pages, 8 figures

References in corpus (7)

• Coherent control of single spins in silicon carbide at room temperature
• Isolated electron spins in silicon carbide with millisecond-coherence times
• Engineering shallow spins in diamond with nitrogen delta-doping
• Engineering near infrared single photon emitters in ultrapure silicon carbide
• Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
• Electron Spin Decoherence in Silicon Carbide Nuclear Spin Bath
• Visible Photoluminescence from Cubic (3C) Silicon Carbide Microdisks Coupled to High Quality Whispering Gallery Modes

Cited by in corpus (63)

• Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
• Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature
• Bright room temperature single photon source at telecom range in cubic silicon carbide
• Quantum properties of dichroic silicon vacancies in silicon carbide
• Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast
• Spin and optical properties of silicon vacancies in silicon carbide (a review)
• Photon blockade in weakly-driven cavity QED systems with many emitters
• Quantum well stabilized point defect spin qubits
• Scalable fabrication of single silicon vacancy defect arrays in silicon carbide using focused ion beam
• Excitation properties of the divacancy in 4H-SiC
• Influence of irradiation on defect spin coherence in silicon carbide
• Coherent control of defect spins in silicon carbide above 550 K
• Self-protected nanoscale thermometry based on spin defects in silicon carbide
• Deterministically Fabricated Solid-State Quantum-Light Sources
• Novel color center platforms enabling fundamental scientific discovery
• Inverse-designed photon extractors for optically addressable defect qubits
• Quantum Information Processing With Integrated Silicon Carbide Photonics
• Spin polarization through Intersystem Crossing in the silicon vacancy of silicon carbide
• Scalable fabrication of hemispherical solid immersion lenses in silicon carbide through grayscale hard-mask lithography
• Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer
• Photon emission correlation spectroscopy as an analytical tool for quantum defects
• Quantum Antennas
• Optimization of the power broadening in optically detected magnetic resonance of defect spins in silicon carbide
• Strain modulation of Si vacancy emission from SiC micro- and nanoparticles
• Cavity QED Based on Thermal Atoms Interacting with a Photonic Crystal Cavity: A Feasibility Study
• Few-photon Fock-state wave packet interacting with a cavity-atom system in a waveguide: Exact quantum state dynamics
• Maskless Generation of Single Silicon Vacancy Arrays in Silicon Carbide by a Focused He+ Ion Beam
• Spectral stability of V2 centres in sub-micron 4H-SiC membranes
• Precise characterization of a silicon carbide waveguide fiber interface
• Optical repumping of resonantly excited quantum emitters in hexagonal boron nitride
• Plasmonic-enhanced bright single spin defects in silicon carbide membranes
• Programmable Quantum Processors based on Spin Qubits with Mechanically-Mediated Interactions and Transport
• Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC
• Nonclassical Light Generation from III-V and Group-IV Solid-State Cavity Quantum Systems
• Precise high-fidelity electron-nuclear spin entangling gates in NV centers via hybrid dynamical decoupling sequences
• Parallel selective nuclear spin addressing for fast high-fidelity quantum gates
• Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity
• Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing
• Site-dependent properties of quantum emitters in nanostructured silicon carbide
• Silicon Carbide Metasurfaces for Controlling the Spontaneous Emission of Embedded Color Centers
• Fluorescence enhancement of single V2 centers in a 4H-SiC cavity antenna
• Optical line shapes of color centers in solids from classical autocorrelation functions
• Check-probe spectroscopy of lifetime-limited emitters in bulk-grown silicon carbide
• Roadmap on Integrated Quantum Photonics
• Generalized scaling of spin qubit coherence in over 12,000 host materials
• Optimum surface-passivation schemes for near-surface spin defects in silicon carbide
• A QM/MM equation-of-motion coupled-cluster approach for predicting semiconductor color-center structure and emission frequencies
• Scalable registration of single quantum emitters within solid immersion lenses through femtosecond laser writing
• Photo-luminescence properties of ion implanted Er3+-defects in 4H-SiCOI towards integrated quantum photonics
• Vacancy-Induced Quantum Properties in 2D Silicon Carbide: Atomistic insights from semi-local and hybrid DFT calculations
• Selective nuclear-spin interaction based on a dissipatively stabilized nitrogen-vacancy center
• Engineering chlorine-based emitters in silicon carbide for telecom-band quantum technologies
• Single photon emission in $WS{e}_2$ up 160 K by quantum yield control
• Engineering spin defects in hexagonal boron nitride
• Impact of Surface Treatment on Noise in PL-Measurements of Silicon Vacancies in 4H-SiC Lateral pin-Diodes
• Wavelength-Dependent Electrical Readout of Spin Ensembles in a Thin-Film SiC-on-Insulator Platform
• On-demand generation of shallow silicon vacancy in silicon carbide
• Waveguide-integrated colour centres in silicon carbide with broadband photonic crystal reflectors for efficient readout
• Spin-photon Qubits for Scalable Quantum Network
• Effect of Emitters on Quantum State Transfer in Coupled Cavity Arrays
• Routing single photons with quantum emitters coupled to nanostructures
• Robust Aluminum Nitride Passivation of Silicon Carbide with Near-Surface Quantum Emitters for Quantum Computing and Sensing Applications
• Coupling hBN quantum emitters to 1D photonic crystal cavities