Optimization of the power broadening in optically detected magnetic resonance of defect spins in silicon carbide

Abstract

Defect spins in silicon carbide have become promising platforms with respect to quantum information processing and quantum sensing. Indeed, the optically detected magnetic resonance (ODMR) of defect spins is the cornerstone of the applications. In this work, we systematically investigate the contrast and linewidth of laser-and microwave power-dependent ODMR with respect to ensemble-divacancy spins in silicon carbide at room temperature. The results suggest that magnetic field sensing sensitivity can be improved by a factor of 10 for the optimized laser and microwave power range. The experiment will be useful for the applications of silicon carbide defects in quantum information processing and ODMR-dependent quantum sensing.

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Cited by in corpus (4)

• nanoTesla magnetometry with the silicon vacancy in silicon carbide
• Photoluminescence Lineshapes for Color Centers in Silicon Carbide from Density Functional Theory Calculations
• Plasmonic-enhanced bright single spin defects in silicon carbide membranes
• Fiber-integrated silicon carbide silicon vacancy-based magnetometer