High precision vector magnetometry with uniaxial quantum centers in silicon carbide

Abstract

We show that uniaxial color centers in silicon carbide with hexagonal lattice structure can be used to measure not only the strength but also the polar angle of the external magnetic field with respect to the defect axis with high precision. The method is based on the optical detection of multiple spin resonances in the silicon vacancy defect with quadruplet ground state. We achieve a perfect agreement between the experimental and calculated spin resonance spectra without any fitting parameters, providing angle resolution of a few degrees in the magnetic field range up to several millitesla. Our approach is suitable for ensembles as well as for single spin-3/2 color centers, allowing for vector magnetometry on the nanoscale at ambient conditions.

References in corpus (10)

• High-sensitivity diamond magnetometer with nanoscale resolution
• Coherent control of single spins in silicon carbide at room temperature
• Isolated electron spins in silicon carbide with millisecond-coherence times
• High sensitivity magnetic imaging using an array of spins in diamond
• Engineering near infrared single photon emitters in ultrapure silicon carbide
• Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
• Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
• Intrinsic defects in silicon carbide LED as a perspective room temperature single photon source in near infrared
• Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide
• Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

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