Optical thermometry based on level anticrossing in silicon carbide

Abstract

We report a giant thermal shift of $2.1$MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences can be detected without application of radiofrequency fields, by simply monitoring the photoluminescence intensity in the vicinity of the level anticrossing. This effect results in an all-optical thermometry technique with temperature sensitivity of $100$mK/Hz${}^{1/2}$ for a detection volume of approximately $10^{-6}$mm${}^3$. In contrast, the zero-field splitting in the ground state does not reveal detectable temperature shift. Using these properties, an integrated magnetic field and temperature sensor can be implemented on the same center.

4 pages, 3 figures

References in corpus (23)

• Nanometer scale quantum thermometry in a living cell
• High precision nano scale temperature sensing using single defects in diamond
• Temperature dependence of the nitrogen-vacancy magnetic resonance in diamond
• Coherent control of single spins in silicon carbide at room temperature
• Fluorescence thermometry enhanced by the quantum coherence of single spins in diamond
• Polytype control of spin qubits in silicon carbide
• Anisotropic interactions of a single spin and dark-spin spectroscopy in diamond
• Measurement and Control of Single Nitrogen-Vacancy Center Spins above 600 K
• Engineering near infrared single photon emitters in ultrapure silicon carbide
• All-optical thermometry and the thermal properties of the optically detected spin resonances of the NV center in nano-diamond
• Single-photon emitting diode in silicon carbide
• Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
• Photoelectrical detection of electron spin resonance of nitrogen-vacancy centres in diamond
• Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
• Intrinsic defects in silicon carbide LED as a perspective room temperature single photon source in near infrared
• All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide
• Spin Coherence and Echo Modulation of the Silicon Vacancy in 4H-SiC at Room Temperature
• High-Sensitivity Temperature Sensing Using an Implanted Single Nitrogen-Vacancy Center Array in Diamond
• Time-averaging within the excited state of the nitrogen-vacancy centre in diamond
• High precision vector magnetometry with uniaxial quantum centers in silicon carbide
• Optically addressable silicon vacancy-related spin centers in rhombic silicon carbide with high breakdown characteristics and ENDOR evidence of their structure
• Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide
• Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

Cited by in corpus (35)

• Semiconductor Qubits In Practice
• Diamond quantum thermometry: From foundations to applications
• Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
• Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
• Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H silicon carbide
• Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions
• Spin and optical properties of silicon vacancies in silicon carbide (a review)
• Scalable fabrication of single silicon vacancy defect arrays in silicon carbide using focused ion beam
• Resonant optical spin initialization and readout of single silicon vacancies in 4H-SiC
• Influence of irradiation on defect spin coherence in silicon carbide
• Coherent control of defect spins in silicon carbide above 550 K
• Self-protected nanoscale thermometry based on spin defects in silicon carbide
• Novel color center platforms enabling fundamental scientific discovery
• nanoTesla magnetometry with the silicon vacancy in silicon carbide
• Local vibrational modes of Si vacancy spin qubits in SiC
• ADAQ: Automatic workflows for magneto-optical properties of point defects in semiconductors
• Optimization of the power broadening in optically detected magnetic resonance of defect spins in silicon carbide
• Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC
• Stress-controlled zero-field spin splitting in silicon carbide
• Thermal evolution of silicon carbide electronic bands
• Quantum sensing with duplex qubits of silicon vacancy centers in SiC at room temperature
• Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC
• Precise high-fidelity electron-nuclear spin entangling gates in NV centers via hybrid dynamical decoupling sequences
• Characterization of single shallow silicon-vacancy centers in 4H-SiC
• Optical spin initialization of spin-3/2 silicon vacancy centers in 6H-SiC at room temperature
• Fiber-integrated silicon carbide silicon vacancy-based magnetometer
• Quantum enhanced electric field mapping within semiconductor devices
• Level-crossing induced spin phenomena in SiC: a theoretical study
• Imaging heat transport in suspended diamond nanostructures with integrated spin defect thermometers
• Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide
• On-demand generation of shallow silicon vacancy in silicon carbide
• Semiconductor Room-Temperature Maser
• Nuclear spin polarization in silicon carbide at room temperature in the Earth's magnetic field
• Acoustically induced coherent spin trapping
• Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields