210 citations · 1.4k across the 20 of their papers we have counts for
19 papers
Identification of different silicon vacancy centers in 6H-SiC
Harpreet Singh, Andrei N. Anisimov, Pavel G. Baranov +1
Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exist…
Subwavelength field localization based on dielectric mesoscale particle with single and blind nanohole array
Oleg V. Minin, Song Zhou, Yinghui Cao +2
Some new unusual physical phenomena and effects associated with dielectric mesoscale particles with Mie size parameter near 10 were studied and have been discovered during the last…
Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC
Harpreet Singh, Mario Alex Hollberg, Andrei N. Anisimov +2
Silicon vacancy centers in silicon carbide are promising candidates for storing and manipulating quantum information. Implementation of fast quantum gates is an essential requireme…
Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface
I. D. Breev, Z. Shang, A. V. Poshakinskiy +11
Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon…
Stress-controlled zero-field spin splitting in silicon carbide
I. D. Breev, A. V. Poshakinskiy, V. V. Yakovleva +6
We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures…
Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy
I. D. Breev, K. V. Likhachev, V. V. Yakovleva +5
We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spat…