188 citations · 363 across the 6 of their papers we have counts for
5 papers · 1 filter
Stress-controlled zero-field spin splitting in silicon carbide
I. D. Breev, A. V. Poshakinskiy, V. V. Yakovleva +6
We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures…
Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy
I. D. Breev, K. V. Likhachev, V. V. Yakovleva +5
We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spat…
Point defects in SiC as a promising basis for single-defect, single-photon spectroscopy with room temperature controllable quantum states
Pavel G. Baranov, Victor A. Soltamov, Alexandra A. Soltamova +2
The unique quantum properties of the nitrogen-vacancy (NV) center in diamond have motivated efforts to find defects with similar properties in silicon carbide (SiC), which can exte…
Intrinsic defects in silicon carbide LED as a perspective room temperature single photon source in near infrared
F. Fuchs, V. A. Soltamov, S. Vaeth +4
Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength o…
Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
D. Riedel, F. Fuchs, H. Kraus +7
Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decad…