Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide

Abstract

Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2 centers in the same silicon carbide crystal, which are immune to nonaxial strain fluctuations. Some of them are characterized by nearly temperature independent axial crystal fields, making these centers very attractive for vector magnetometry. Contrarily, the zero-field splitting of another center exhibits a giant thermal shift of -1.1 MHz/K at room temperature, which can be used for thermometry applications. We also discuss a synchronized composite clock exploiting spin centers with different thermal response.

8 pages, 7 figures

References in corpus (5)

• High-sensitivity diamond magnetometer with nanoscale resolution
• Scanning magnetic field microscope with a diamond single-spin sensor
• Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
• Intrinsic defects in silicon carbide LED as a perspective room temperature single photon source in near infrared
• Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide

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• Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature
• Optimization of the power broadening in optically detected magnetic resonance of defect spins in silicon carbide
• Strain modulation of Si vacancy emission from SiC micro- and nanoparticles
• Stress-controlled zero-field spin splitting in silicon carbide
• SiC-YiG X band quantum sensor for sensitive surface paramagnetic resonance applied to chemistry, biology, physics