557 citations · 2.2k across the 19 of their papers we have counts for
18 papers
Probing Remote Nuclear Magnetic Moments in hBN with VB Electron Spin
G. V. Mamin, E. V. Dmitrieva, F. F. Murzakhanov +6
Since the initial discovery of optically addressable spins of the negatively charged boron vacancy defect (VB) in hexagonal boron nitride (hBN), substantial progress has been made,…
Influence of 14N hyperfine interaction on electron nuclear double resonance of boron vacancy in hexagonal boron nitride
G. V. Mamin, E. V. Dmitrieva, F. F. Murzakhanov +3
The research focuses on the explanation of a phenomenon observed in the spectra of electron nuclear resonance (ENDOR) pertaining to nitrogen atoms adjacent to the boron vacancy (VB…
14N Hyperfine and nuclear interactions of axial and basal NV centers in 4H-SiC: A high frequency (94 GHz) ENDOR study
F. F. Murzakhanov, M. A. Sadovnikova, G. V. Mamin +6
The nitrogen-vacancy (NV) centers (NCVSi) - in 4H silicon carbide (SiC) constitute an ensemble of spin S = 1 solid state qubits interacting with the surrounding 14N and 29Si nuclei…
Electron-nuclear coherent coupling and nuclear spin readout through optically polarized VB- spin states in hBN
Fadis F. Murzakhanov, Georgy V. Mamin, Sergei B. Orlinskii +8
Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter, are basic requirements for an application in quantum technologies. We sho…
Sub-nanoscale Temperature, Magnetic Field and Pressure sensing with Spin Centers in 2D hexagonal Boron Nitride
Andreas Gottscholl, Matthias Diez, Victor Soltamov +6
Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered n…
Room Temperature Coherent Control of Spin Defects in hexagonal Boron Nitride
Andreas Gottscholl, Matthias Diez, Victor Soltamov +6
Optically active defects in solids with accessible spin states are promising candidates for solid state quantum information and sensing applications. To employ these defects as qua…
Electron nuclear interactions and electronic structure of spin 3/2 color centers in silicon carbide: A high-field pulse EPR and ENDOR study
V. A. Soltamov, B. V. Yavkin, A. N. Anisimov +4
High-frequency pulse electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) were used to clarify the electronic structure of the color centers with an…
Room Temperature Initialisation and Readout of Intrinsic Spin Defects in a Van der Waals Crystal
Andreas Gottscholl, Mehran Kianinia, Victor Soltamov +7
Optically addressable spins in widebandgap semiconductors have become one of the most prominent platforms for exploring fundamental quantum phenomena. While several candidates in 3…
Excitation and coherent control of spin qudit modes with sub-MHz spectral resolution
V. A. Soltamov, C. Kasper, A. V. Poshakinskiy +7
Quantum bit or qubit is a two-level system, which builds the foundation for quantum computation, simulation, communication and sensing. Quantum states of higher dimension, i.e., qu…
Spin and optical properties of silicon vacancies in silicon carbide (a review)
S. A. Tarasenko, A. V. Poshakinskiy, D. Simin +5
We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which m…
Strain broadening of the 1042-nm zero-phonon line of the NV- center in diamond: a promising spectroscopic tool for defect tomography
T. B. Biktagirov, A. N. Smirnov, V. Yu. Davydov +4
The negatively charged nitrogen-vacancy (NV-) center in diamond is a promising candidate for many quantum applications. Here, we examine the splitting and broadening of the center'…
Optical thermometry based on level anticrossing in silicon carbide
A. N. Anisimov, D. Simin, V. A. Soltamov +4
We report a giant thermal shift of MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the ind…
Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects
A. Muzha, F. Fuchs, N. V. Tarakina +8
Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window…
Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide
T. C. Hain, F. Fuchs, V. A. Soltamov +4
We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect co…
Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
H. Kraus, V. A. Soltamov, F. Fuchs +5
Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very att…
Point defects in SiC as a promising basis for single-defect, single-photon spectroscopy with room temperature controllable quantum states
Pavel G. Baranov, Victor A. Soltamov, Alexandra A. Soltamova +2
The unique quantum properties of the nitrogen-vacancy (NV) center in diamond have motivated efforts to find defects with similar properties in silicon carbide (SiC), which can exte…
Intrinsic defects in silicon carbide LED as a perspective room temperature single photon source in near infrared
F. Fuchs, V. A. Soltamov, S. Vaeth +4
Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength o…
Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC
Victor A. Soltamov, Alexandra A. Soltamova, Ivan I. Proskuryakov +1
We report the realization of the optically induced inverse population of the ground-state spin sublevels of the silicon vacancies () in silicon carbide (SiC) at ro…