Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide

Abstract

We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is varied over several orders of magnitude. We establish the excitation profile for optical pumping of these defects and evaluate the optimum excitation wavelength of 770 nm. We also measure the photoluminescence dynamics at room temperature and find a monoexponential decay with a characteristic lifetime of 6.1 ns. The integrated photoluminescence intensity depends linear on the excitation power density up to 20 kW/cm${}^2$, indicating a relatively small absorption cross section of these defects.

arXiv comment4 pages, 4 figures

References in corpus (6)

• Quantum computing with defects
• Polytype control of spin qubits in silicon carbide
• Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
• Intrinsic defects in silicon carbide LED as a perspective room temperature single photon source in near infrared
• Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC
• Electrically driven spin resonance in silicon carbide color centers

Cited by in corpus (23)

• Coherent control of single spins in silicon carbide at room temperature
• Engineering near infrared single photon emitters in ultrapure silicon carbide
• Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
• Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center
• All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide
• Optical thermometry based on level anticrossing in silicon carbide
• High precision vector magnetometry with uniaxial quantum centers in silicon carbide
• Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H silicon carbide
• Spin and optical properties of silicon vacancies in silicon carbide (a review)
• Scalable fabrication of single silicon vacancy defect arrays in silicon carbide using focused ion beam
• Resonant optical spin initialization and readout of single silicon vacancies in 4H-SiC
• Influence of irradiation on defect spin coherence in silicon carbide
• Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects
• Spin polarization through Intersystem Crossing in the silicon vacancy of silicon carbide
• Quantum photonics in triangular-cross-section nanodevices in silicon carbide
• Highly efficient optical pumping of spin defects in silicon carbide for stimulated microwave emission
• Electron nuclear interactions and electronic structure of spin 3/2 color centers in silicon carbide: A high-field pulse EPR and ENDOR study
• Characterization of single shallow silicon-vacancy centers in 4H-SiC
• Optical spin initialization of spin-3/2 silicon vacancy centers in 6H-SiC at room temperature
• Transition state redox during dynamical processes in semiconductors and insulators
• High-Fidelity and Ultrafast Initialization of a Hole Spin Bound to a Te Isoelectronic Center in ZnS
• Ultralong-term high-density data storage with atomic defects in SiC
• Coupling 4H-Silicon Carbide spins to a microwave resonator at milli-Kelvin temperature