activity
19992023
most citedThe interlayer cohesive energy of graphite from thermal desorption of polyaromatic hydrocarbons

1.1k citations · 1.7k across the 12 of their papers we have counts for

collaborators

14 papers

cond-mat.mtrl-sci2023

Trions, Exciton Dynamics and Spectral Modifications in Doped Carbon Nanotubes: A Singular Defect-Driven Mechanism

Klaus H. Eckstein, Pascal Kunkel, Markus Voelckel +2

Doping substantially influences the electronic and photophysical properties of semiconducting single-wall carbon nanotubes (s-SWNTs). Although prior studies have noted that surplus…

cond-mat.mes-hall2021

Diffusive and Unimolecular Nonradiative Decay of Excited States in Doped Carbon Nanotubes

Klaus H. Eckstein, Pascal Kunkel, Markus Voelckel +4

Doping can profoundly affect the electronic- and optical-structure of semiconductors. Here we address the effect of surplus charges on non-radiative (NR) exciton and trion decay in…

physics.chem-ph2021

Infrared Study of Charge Carrier Confinement in Doped (6,5) Carbon Nanotubes

Klaus H. Eckstein, Florian Hirsch, Richard Martel +1

Electronic degrees of freedom and their coupling to lattice vibrations in semiconductors can be strongly modified by doping. Accordingly, the addition of surplus charge carriers to…

cond-mat.mtrl-sci2019

Quantifying Doping Levels in Carbon Nanotubes by Optical Spectroscopy

Klaus H. Eckstein, Florian Oberndorfer, Melanie M. Achsnich +2

Controlling doping is essential for a successful integration of semiconductor materials into device technologies. However, the assessment of doping levels and the distribution of c…

cond-mat.mes-hall2014★ 32 cited

High energetic excitons in carbon nanotubes directly probe charge-carriers

Giancarlo Soavi, Francesco Scotognella, Daniele Viola +4

Theory predicts peculiar features for excited-state dynamics in one dimension (1D) that are difficult to be observed experimentally. Single-walled carbon nanotubes (SWNTs) are an e…

cond-mat.mtrl-sci2014★ 70 cited

Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide

T. C. Hain, F. Fuchs, V. A. Soltamov +4

We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect co…