Characterization of single shallow silicon-vacancy centers in 4H-SiC
arXiv:2209.12722 · doi:10.1103/PhysRevB.107.134117
Abstract
Shallow negatively charged silicon-vacancy centers have applications in magnetic quantum sensing and other quantum applications. Vacancy centers near the surface (within 100 nm) have different spin relaxation rates and optical spin polarization, affecting the optically detected magnetic resonance (ODMR) signal. This makes it essential to characterize these centers. Here we present the relevant spin properties of such centers. ODMR with a contrast of up to 6 %, which is better than the state of the art, allowed us to determine the zero field splitting, which is relevant for most sensing applications. We also present intensity-correlation data to verify that the signal originates from a single center and to extract transition rates between different electronic states.
References in corpus (13)
- High-sensitivity diamond magnetometer with nanoscale resolution
- Coherent control of single spins in silicon carbide at room temperature
- Isolated electron spins in silicon carbide with millisecond-coherence times
- Engineering near infrared single photon emitters in ultrapure silicon carbide
- Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
- Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
- Optical charge state control of spin defects in 4H-SiC
- Optical thermometry based on level anticrossing in silicon carbide
- Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
- Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide
- nanoTesla magnetometry with the silicon vacancy in silicon carbide
- Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide
- Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC