nanoTesla magnetometry with the silicon vacancy in silicon carbide

Abstract

Silicon Carbide is a promising host material for spin defect based quantum sensors owing to its commercial availability and established techniques for electrical and optical microfabricated device integration. The negatively charged silicon vacancy is one of the leading spin defects studied in silicon carbide owing to its near telecom photoemission, high spin number, and nearly temperature independent ground state zero field splitting. We report the realization of nanoTesla shot-noise limited ensemble magnetometry based on optically detected magnetic resonance with the silicon vacancy in 4H silicon carbide. By coarsely optimizing the anneal parameters and minimizing power broadening, we achieved a sensitivity of 3.5 nT/$\sqrt{Hz}$. This was accomplished without utilizing complex photonic engineering, control protocols, or applying excitation powers greater than a Watt. This work demonstrates that the silicon vacancy in silicon carbide provides a low-cost and simple approach to quantum sensing of magnetic fields.

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Cited by in corpus (9)

• Quantum sensing with duplex qubits of silicon vacancy centers in SiC at room temperature
• Characterization of single shallow silicon-vacancy centers in 4H-SiC
• Fiber-integrated silicon carbide silicon vacancy-based magnetometer
• Quantum enhanced electric field mapping within semiconductor devices
• A Concise Primer on Solid-State Quantum Emitters
• Reproducibility and variability in commercial SiC MOSFETs at deep-cryogenic temperatures
• Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields
• High-Field EPR/ENDOR of N/Be Centers for Defect Engineering in 6H-SiC
• Optical and Strain Stabilization of Point Defects in Silicon Carbide