paper

High-Field EPR/ENDOR of N/Be Centers for Defect Engineering in 6H-SiC

arXiv:2607.27862 · doi:10.3390/nano16150921

Abstract

Silicon carbide (SiC) in its various structural modifications is widely used in power semiconductor electronics, operating under extreme conditions of high temperature, high voltage, and intense radiation. The discovery of spin defects (S>0) with unique optical and coherent properties has further positioned SiC as a promising platform for quantum technologies. Here, we investigate a 6H-SiC single crystal co-doped with nitrogen and beryllium at concentrations of 1018 cm-3, using continuous-wave and pulsed electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR). To enhance spectral resolution, experiments were conducted in the W-band (94 GHz; B = 3.4 T). Pulsed EPR identified nitrogen donors and beryllium acceptors in various lattice positions, allowing for the determination of their phase coherence and spin-lattice relaxation times. ENDOR measurements elucidated the electron-nuclear interactions with the local silicon and carbon environment, including distant coordination spheres. The observed hyperfine structures indicated highly delocalized spin density within the supercell. The TRIPLE resonance spectra verify coupled nuclear spin subspaces from different coordination spheres due to defect spin density. These results demonstrate the feasibility of incorporating dual impurities with distinct functional roles while preserving the crystal lattice`s structural features.

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