12 citations · 12 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2026
High-Field EPR/ENDOR of N/Be Centers for Defect Engineering in 6H-SiC
Yuliya Ermakova, Ekaterina Dmitrieva, Margarita Sadovnikova +5
Silicon carbide (SiC) in its various structural modifications is widely used in power semiconductor electronics, operating under extreme conditions of high temperature, high voltag…
cond-mat.mtrl-sci2024★ 12 cited
14N Hyperfine and nuclear interactions of axial and basal NV centers in 4H-SiC: A high frequency (94 GHz) ENDOR study
F. F. Murzakhanov, M. A. Sadovnikova, G. V. Mamin +6
The nitrogen-vacancy (NV) centers (NCVSi) - in 4H silicon carbide (SiC) constitute an ensemble of spin S = 1 solid state qubits interacting with the surrounding 14N and 29Si nuclei…