8 citations · 8 across the 3 of their papers we have counts for
3 papers
High-Field EPR/ENDOR of N/Be Centers for Defect Engineering in 6H-SiC
Yuliya Ermakova, Ekaterina Dmitrieva, Margarita Sadovnikova +5
Silicon carbide (SiC) in its various structural modifications is widely used in power semiconductor electronics, operating under extreme conditions of high temperature, high voltag…
Probing Remote Nuclear Magnetic Moments in hBN with VB Electron Spin
G. V. Mamin, E. V. Dmitrieva, F. F. Murzakhanov +6
Since the initial discovery of optically addressable spins of the negatively charged boron vacancy defect (VB) in hexagonal boron nitride (hBN), substantial progress has been made,…
Optical Spin Initialization of Nitrogen Vacancy Centers in a 28Si-Enriched 6H-SiC Crystal for Quantum Technologies
F. F. Murzakhanov, M. A. Sadovnikova, G. V. Mamin +4
High-spin defect centers in crystal matrices are used in quantum computing technologies, highly sensitive sensors, and single-photon sources. In this work, optically active nitroge…