Electrically active defects in 3C, 4H and 6H silicon carbide polytypes: A review

Abstract

This paper aims to critically review electrically active defects studied by junction spectroscopy techniques (deep-level transient spectroscopy and minority carrier transient spectroscopy) in the three most commonly used silicon carbide (SiC) polytypes: 3C-SiC, 4H-SiC, and 6H-SiC.

22 pages, 10 figures

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Cited by in corpus (4)

• Defects in Silicon Carbide as Quantum Qubits: Recent Advances in Defect Engineering
• Characterisation of Crystalline Defects in 4H Silicon Carbide using DLTS and TSC
• High-Field EPR/ENDOR of N/Be Centers for Defect Engineering in 6H-SiC
• The influence of implantation conditions on dopant activation in Al-implanted 4H-SiC: A MD study applying an Al potential fitted to DFT barriers