56 citations · 243 across the 11 of their papers we have counts for
11 papers
Beyond Point-like Defects in Bulk Semiconductors: Junction Spectroscopy Techniques for Perovskite Solar Cells and 2D Materials
Ivana Capan
Junction spectroscopy techniques (JSTs) are powerful tools for investigating electrically active defects in semiconductors. Originally developed to study point-like defects in bulk…
Defects in Silicon Carbide as Quantum Qubits: Recent Advances in Defect Engineering
Ivana Capan
This review provides an overview of defects in silicon carbide (SiC) with potential applications as quantum qubits. It begins with a brief introduction to quantum qubits and existi…
Electrically active defects in 3C, 4H and 6H silicon carbide polytypes: A review
Ivana Capan
This paper aims to critically review electrically active defects studied by junction spectroscopy techniques (deep-level transient spectroscopy and minority carrier transient spect…
Wide bandgap semiconductors for radiation detection: A review
Ivana Capan
In this paper, an overview of the wide bandgap (WBG) semiconductors for radiation detection applications is presented. The recent advancements in the fabrication of high-quality wa…
Boron-related defects in n-type 4H-SiC Schottky barrier diodes
Tihomir Knežević, Eva Jelavić, Yuichi Yamazaki +3
We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy…
Theory of shallow and deep boron defects in 4H-SiC
Vitor J. B. Torres, Ivana Capan, José Coutinho
Abstract Despite advances toward improving the quality of -type 4H-SiC substrates and layers, we still have no model capable of accounting for the multitude of boron-related opt…
Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS
Tihomir Knežević, Tomislav Brodar, Vladimir Radulović +3
We report on the low-energy electron and fast neutron irradiated 4H-SiC studied by deep-level transient spectroscopy (DLTS) and Laplace DLTS. Irradiations introduced two defects, E…
M-center in low-energy electron irradiated 4H-SiC
Tihomir Knezevic, Amira Hadzipasic, Takeshi Ohshima +2
We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-level transient spectroscopy (DLTS) and Laplace-DLTS. Electron irradiation has introduced t…
The M-center in 4H-SiC is a carbon self-interstitial
J. Coutinho, J. D. Gouveia, T. Makino +5
The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M-center in 4H-SiC, a bistable defect responsible for a family of ele…
Silicon carbide diodes for neutron detection
José Coutinho, Vitor J. B. Torres, Ivana Capan +11
In the last two decades we have assisted to a rush towards finding a He3-replacing technology capable of detecting neutrons emitted from fissile isotopes. The demand stems from app…
Acceptor levels of the carbon vacancy in -SiC: combining Laplace deep level transient spectroscopy with density functional modeling
Ivana Capan, Tomislav Brodar, José Coutinho +3
We provide direct evidence that the broad Z peak, commonly observed by conventional DLTS in as-grown and at high concentrations in radiation damaged -SiC, has two compo…